6/12/2021 – On account of his leadership and service to the Department and University, especially as the President of the Joint Safety Task Force, Mike is awarded the 2021 Individual Excellence in Safety Award from OSU’s University Laboratory Safety Committee. Congratulations!
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6/12/2021 – Mike is awarded the 2021 Individual Excellence in Safety Award at Ohio State University!
Jun 11
NSF put together an NSF Science Nation video on our discovery of axis-dependent conduction polarity, and our use of the amazing NSF-PARADIM crystal growth facility at Johns Hopkins University to help us grow Re4Si7 crystals.
https://www.nsf.gov/news/mmg/mmg_disp.jsp?med_id=187313
The PARADIM user facility is an amazing, one of a kind user facility. We highly recommend it to all researchers interested in crystal and thin film growth.
Mike’s paper on Re4Si7, which shows the viability of transverse thermoelectrics is finally published in Energy and Environmental Sciences.
Lots of Press on Re4Si7 including;
https://phys.org/news/2021-05-gold-standard-compound-electricity.html
https://www.tekniikkatalous.fi/uutiset/tt/0baf2ebe-b566-4170-98ba-a326c10d0e2b
Congratulations to Sammy for completing his Honors Thesis, and graduating with Distinction in Biochemistry!
Karl’s paper on the creation and properties of PbxSn4-xAs3 is out in the Journal of Materials Chemistry C. In our search for new gonipolar materials we discovered a new family of layered Pb-Sn alloy compounds.
Andy’s paper on the Discovery of Axis Dependent Conduction Polarity in NaSnAs, a 0.6 eV band gap semiconductor is out.
Congratulations to Mike Scudder who won a Presidential Fellowship!
Happy New Year and a special welcome to the new group members Olivia Davis, Cullen Irvine, Ryan Nelson, and Archibald Williams!
Congratulations to Ben for winning an honorable mention in the undergraduate poster award competition at Ohio Inorganic Weekend.
Our group’s work on discovering Goniopolar behavior in NaSn2As2 is published in Nature Materials. Briefly, most electronic materials are thought of as either metallic, or semiconducting that is doped to give a particular p-type or n-type conduction behavior. However, layered materials have different orbitals holding the structure together in-plane vs. cross-plane. Here we discover that these layered materials can simultaneously exhibit n-type behavior in-plane vs. p-type behavior cross-plane. This “crystallographic angle-dependence” of conduction polarity we denote as “Goniopolarity”
See press;
https://news.osu.edu/researchers-discover-new-material-to-help-power-electronics/